Workshop on Advanced
Semiconductor Materials
and devices for Power
Electronics applications


   May 7th-8th, 2009 – Catania, Italy

Workshop on Advanced
Semiconductor Materials
and devices for Power
Electronics applications

March 20, 2009
Abstract submission

April 1 , 2009
Notification of acceptance

April 20, 2009
Extended abstract submission


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Conference objectives

Wide Band-Gap Materials expand the boundaries for electronic devices and their use within electronic power systems and are now becoming a commercial reality.

The third International “Workshop on Advanced Semiconductor Materials and devices for Power Electronics applications” – WASMPE’09 – is a follow-up of the first one held in Barcelona (Spain), in October 2005, and the second held in Olbia (Italy), in July 2007.

WASMPE’09 will present and discuss the latest developments in full Silicon Carbide (SiC), and prospective beyond SiC such as Gallium Nitride (GaN on Si, on SiC, on sapphire and freestanding) and Diamond (C) power electronics. An outlook to graphene will be also considered.

A wide range of topics will be reviewed including (among others) advanced semiconductor materials, devices and applications for power and Rf electronics.

The Conference will provide an intimate forum for industrial and academic people to “plan the future” of this vibrant field, from material quality and wafer diameter to packaged devices.

Only a limited number of presentations will be accepted of general impact reviewing important issues.

 

Local Chairs

 

Vito Raineri
CNR-IMM, Catania (Italy)

  Fabrizio Roccaforte
CNR-IMM, Catania (Italy)


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